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硅,溅射靶材, Si, 101.6 mm直径, 6.4mm厚, 5N
硅,溅射靶材, Si, 101.6 mm直径, 6.4mm厚, 5N图片
品牌: Goodfellow
纯度含量: 99.999%
产地: 英国
索取资料及报价
品牌:Goodfellow
纯度含量:99.999%
产地:英国
产品介绍
订货号包装规格
Disc
337-187-21101.6 mm

产品参数

Diameter[直径]101.6 mm
Electrical Type[电气类型]P-Type
Purity[纯度]99.999%
Thickness[厚度]6.4mm
Typical Analysis(典型分析)
Al<1 PPM
Ba<2 PPM
Bi<2 PPM
Ca<1 PPM
Cd<1 PPM
Cu<1 PPM
Physical Properties(物理性质)
Boiling point ( C )2355
Density ( g cm⁻³ )2.340 @20℃
Mechanical Properties(机械性能)
Bulk modulus ( GPa ) ( Polycrystalline )100.0
Hardness - Mohs ( Polycrystalline )7.00
Material conditionPolycrystalline
Poisson's ratio ( Polycrystalline )0.420
Tensile modulus ( GPa ) ( Polycrystalline )113.00
Atomic Properties(原子属性)
Atomic number14
Atomic weight ( amu )28.08550
Crystal structureDiamond
Electronic structureNe3s²3p²
Ionisation potential ( No./eV )5 / 167
Ionisation potential ( No./eV )1 / 8.15
Ionisation potential ( No./eV )2 / 16.3
Ionisation potential ( No./eV )3 / 33.5
Ionisation potential ( No./eV )4 / 45.1
Ionisation potential ( No./eV )6 / 205
Natural isotope distribution ( Mass No./% )30 / 3.10
Natural isotope distribution ( Mass No./% )29 / 4.67
Natural isotope distribution ( Mass No./% )28 / 92.23
Photo-electric work function ( eV )4.20
Thermal neutron absorption cross-section ( Barns )0.1600
Valences shown4
Electrical Properties(电气特性)
Electrical resistivity ( μOhmcm )23x10¹⁰@20℃
Thermal emf against Pt (cold 0C - hot 100C) ( mV )-41.56
Thermal Properties(热性能)
Coefficient of thermal expansion ( x10⁻⁶ K⁻¹ )4.700 - 7.600 @0-100℃
Latent heat of evaporation ( J g⁻¹ )13700
Latent heat of fusion ( J g⁻¹ )1650.00
Melting point ( C )1410.00
Specific heat ( J K⁻¹ kg⁻¹ )703.0 @25℃
Thermal conductivity ( W m⁻¹ K⁻¹ )80.00 - 150.00 @0-100℃

其他参数

公差

直径±0.5mm
厚度±0.5mm
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